smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BFS19 absolute maximum ratings t a =25 parameter symbol max unit collector-base voltage (emitter open) v cbo 30 v collector-emitter voltage (base open) v ceo 20 v emitter-base voltage (collector open) v ebo 5v collector current i c 30 ma peak collector current i cm 30 ma total power dissipation p tot 250 mw storage temperature t stg 150 junction temperature t j 150 operating ambient temperature t amb 150 electrical characteristics t a =25 3 parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = 100 a , i e =0 30 v collector-emitter breakdown voltage bv ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage bv ebo i e = 100 a , i c =0 5 v collector-base cutoff current i cbo v cb =20v,i e =0 v cb =20v,i e = 0, tj = 100 100 10 na a emitter-base cutoff current i ebo v eb =5.0v,i c = 0 100 na forward current transfer ratio h fe v ce =10v,i c = 1.0 ma 65 225 emitter-base voltage v be v ce =10v,i c = 1.0 ma 650 740 mv transition frequency f t v ce =10v,i c = 1 ma ,f = 100 mhz 260 mhz collector capacitance c c v cb =10v,i e =1ma,f=1mhz 1 pf feedback capacitance cre v cb =10v,i c = 0 ma, f = 1 mhz 0.85 pf marking marking f2 features low current (max. 30 ma) low voltage (max. 20 v) sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type product specification 4008-318-123
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